BF510 Datasheet

 
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Description:
Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).

The above info is from ( http://www.seekic.com )

Features:


The above info is from (www.seekic.com)

(Absolute) Maximum Ratings:
Drain-source voltage VDS max. 20 V
Drain-gate voltage (open source) VDGO max. 20 V
Drain current (DC or average) ID max. 30 mA
Gate current ± IG max. 10 mA
Total power dissipation up to Tamb =40 ℃ Ptot max. 250 mW
Storage temperature range Tstg −65 to + 150
Junction temperature Tj max.